This result is similar to van der Waals epitaxial growth of MoS2

This result is similar to van der Waals epitaxial growth of MoS2 on graphene [21] and perhaps originates from the higher boundary effect of the Evofosfamide ic50 narrower graphene belt after mechanical exfoliation [25]. Besides, the triangular h-BN nanosheets on graphene showed different in-plane orientations from each other. Raman spectroscopy provided a useful means of gleaning

information about the lattice vibration modes of graphene and h-BN. After being transferred to SiO2/Si by the Scotch tape mechanical exfoliation method, the graphene was generally aligned with the (002) lattice plane parallel to the surface of the SiO2/Si wafer [1, 2]. The existence of graphene was shown by Raman spectra in Figure 3, in which the I 2D/I G ratio of graphene was less than 0.5, indicating the multilayer structure of the graphene. Moreover, a weak D peak of graphene at 1,350 cm-1 was observed from the Raman spectra (Figure 3), indicating a small number of defects in the graphene, which may have originated from the original HOPG or the mechanical exfoliation process. For the sample examined after CVD, a peak much stronger than the D peak of graphene appeared at 1,367 cm-1, indicating the E 2g vibration mode of h-BN, which was consistent with the reported values [5, 6, 13–19]. Interestingly, the 2D and G

peaks for graphene diminished in intensity after CVD, and this may have originated from the partial buy Staurosporine coverage of the graphene by h-BN. As shown in Figure 3b,c, the G peaks of graphene for the graphene substrate and h-BN/graphene were fitted with Lorentz curves (solid lines). The fitting data were well fitted with the raw data, while the Raman frequency and full width at half maximum (FWHMs) for G bands were almost equal to each other. These results are comparable with the reported values of graphene [26] and graphite [27, 28], showing the high quality

of graphene Selleck BIBW2992 before and after CVD and indicating that the synthesis of h-BN nanosheets on graphene in our Phosphatidylinositol diacylglycerol-lyase manuscript does not cause a degradation of graphene. Figure 3 Raman spectra. (a) Raman spectra of graphene before CVD (lower plot) and h-BN/graphene after CVD (upper plot). G peaks fitting with Lorentz curves (solid lines) for graphene substrate (b) and h-BN/graphene (c) are shown with their FWHMs, respectively. According to previous reports [29], the gas-phase nucleation for h-BN was absent at growth temperatures lower than 1,000°C; hence, the growth of h-BN nanosheets on graphene was dominated by the surface nucleation during our CVD process at 900°C. Moreover, the surface topography of the substrate is vital to the surface nucleation [30]. Consequently, the nucleation of the h-BN nanosheets on the graphene substrate was regulated by the surface morphology of graphene in our work.

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