Conclusions In this paper, the total ionizing dose (TID) effect of 60Co γ ray radiation on Ag/AlO x /Pt RRAM devices has been investigated. Degradations of uniformity and performance are observed in resistance and switching voltage, which is caused by the radiation-induced holes. A hybrid filament model is proposed to suggest that holes are co-operated with Ag ions to build filaments. The model is proved by the thermal coefficients of resistivity in LRS. Moreover, the Ag/AlO x /Pt RRAM devices
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